DB HiTek Co., Ltd.

• Europe's largest power semiconductor exhibition to be held in Nuremberg, Germany, from June 9 to 11
• Showcasing latest developments in SiC and GaN, highlighting its power semiconductor capabilities

SEOUL, South Korea, April 29, 2026 /PRNewswire/ -- DB HiTek, a leading 8-inch pure-play foundry, announced its participation in PCIM (Power Conversion and Intelligent Motion) Europe 2026, the continent's premier exhibition for power semiconductors. The event will take place in Nuremberg, Germany, from June 9 to 11 (local time), as the company continues expanding its presence in the European market.

Following its successful debut at PCIM in 2025—where the company held face-to-face meetings with dozens of customers to discuss process technologies and collaboration opportunities—DB HiTek is building on that momentum. With over 1,000 booth visitors last year and ongoing business discussions, the company expects these engagements to translate into tangible business results this year through continued partnerships.

At this year's event, DB HiTek will present progress in its next-generation SiC (Silicon Carbide) and GaN (Gallium Nitride) processes. The company will also highlight its industry-leading BCDMOS (Bipolar-CMOS-DMOS) technology, a core strength of its power management portfolio. A robust schedule of meetings with global clients is already in place, reflecting continued growth in collaboration.

According to market research firm Yole Développement, the global SiC and GaN power semiconductor markets are set for rapid growth. The SiC market is projected to grow from approximately $4.8 billion in 2026 to $10.4 billion by 2030, representing a compound annual growth rate (CAGR) of 21%. Over the same period, the GaN market is expected to expand from $900 million to $2.9 billion, reflecting a CAGR of 33%.

DB HiTek started MPW (Multi-Project Wafer) runs for its SiC and GaN processes in December 2025, producing samples for more than 10 customer products. These were delivered between March and April 2026. Customer evaluations are underway, with feedback to be incorporated into final process verification. Full-scale mass production is scheduled to begin in 2027.

Currently, DB HiTek maintains mass production relationships with approximately 400 customers, primarily focused on its flagship power semiconductor products. The company also works with a broad client base using specialized image sensor technologies, including X-ray, Global Shutter, and SPAD (Single Photon Avalanche Diode). Its application mix is increasingly shifting toward industrial and automotive-grade products, reflecting growing demand from these sectors.

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SOURCE DB HiTek

- Key Technology Driving High-Efficiency and Miniaturization for AI Data Centers, Robotics, and Other Applications

- Dedicated GaN MPW Set for End of October

- Extending BCD Expertise to Compound Semiconductors Including GaN and SiC

SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride High-Electron Mobility Transistor) process, a next-generation power semiconductor platform. The company is also to offer a dedicated GaN MPW (multi-project wafer) program at the end of October.

Compared with traditional silicon-based power devices, GaN-based semiconductors deliver superior performance under high-voltage, high-frequency, and high-temperature operating conditions, offering exceptional power efficiency. In particular, 650V E-Mode GaN HEMT stands out for its high-speed switching performance and robust operational stability, making it well-suited for EV charging infrastructure, power conversion systems in hyperscale data centers, and advanced 5G network equipment.

In 2022, when the compound semiconductor market was still in its infancy, DB HiTek identified GaN and SiC as key growth drivers and has since invested significantly in process development. A DB HiTek spokesperson commented, "DB HiTek is already recognized worldwide for its leadership in silicon-based power semiconductor technologies, including the development of the industry's first 0.18µm BCDMOS process. By adding GaN process capabilities, we are expecting to enhance the company's competitiveness with a broad technology portfolio."

Following completion of the 650V GaN HEMT process, DB HiTek plans to roll out a 200V GaN process and a 650V GaN process optimized for IC (Integrated Circuit) integration by the end of 2026. Looking ahead, the company aims to expand its GaN platform across a wider voltage spectrum, aligned with market needs and customer requirements.

To support these initiatives, DB HiTek is expanding the cleanroom facilities of Fab2, located at Chungcheongbuk-do, South Korea. The expansion is expected to add capacity for approximately 35,000 8-inch wafers per month, supporting production of GaN, BCDMOS, and SiC processes. Upon completion, DB HiTek's total monthly wafer capacity will increase by 23%, from 154,000 to 190,000 wafers.

Meanwhile, DB HiTek will participate in ICSCRM(The International Conference on Silicon Carbide and Related Materials) 2025, scheduled for September 15–18 at BEXCO in Busan. At this global industry forum, DB HiTek will highlight progress in SiC process development alongside its GaN and BCDMOS technologies, engaging directly with customers and industry leaders.

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SOURCE DB HiTek