DB HiTek Co., Ltd.

- Key Technology Driving High-Efficiency and Miniaturization for AI Data Centers, Robotics, and Other Applications

- Dedicated GaN MPW Set for End of October

- Extending BCD Expertise to Compound Semiconductors Including GaN and SiC

SEOUL, South Korea, Sept. 11, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch specialty foundry, today announced it is in the final stages of development of its 650V E-Mode GaN HEMT (Gallium Nitride High-Electron Mobility Transistor) process, a next-generation power semiconductor platform. The company is also to offer a dedicated GaN MPW (multi-project wafer) program at the end of October.

Compared with traditional silicon-based power devices, GaN-based semiconductors deliver superior performance under high-voltage, high-frequency, and high-temperature operating conditions, offering exceptional power efficiency. In particular, 650V E-Mode GaN HEMT stands out for its high-speed switching performance and robust operational stability, making it well-suited for EV charging infrastructure, power conversion systems in hyperscale data centers, and advanced 5G network equipment.

In 2022, when the compound semiconductor market was still in its infancy, DB HiTek identified GaN and SiC as key growth drivers and has since invested significantly in process development. A DB HiTek spokesperson commented, "DB HiTek is already recognized worldwide for its leadership in silicon-based power semiconductor technologies, including the development of the industry's first 0.18µm BCDMOS process. By adding GaN process capabilities, we are expecting to enhance the company's competitiveness with a broad technology portfolio."

Following completion of the 650V GaN HEMT process, DB HiTek plans to roll out a 200V GaN process and a 650V GaN process optimized for IC (Integrated Circuit) integration by the end of 2026. Looking ahead, the company aims to expand its GaN platform across a wider voltage spectrum, aligned with market needs and customer requirements.

To support these initiatives, DB HiTek is expanding the cleanroom facilities of Fab2, located at Chungcheongbuk-do, South Korea. The expansion is expected to add capacity for approximately 35,000 8-inch wafers per month, supporting production of GaN, BCDMOS, and SiC processes. Upon completion, DB HiTek's total monthly wafer capacity will increase by 23%, from 154,000 to 190,000 wafers.

Meanwhile, DB HiTek will participate in ICSCRM(The International Conference on Silicon Carbide and Related Materials) 2025, scheduled for September 15–18 at BEXCO in Busan. At this global industry forum, DB HiTek will highlight progress in SiC process development alongside its GaN and BCDMOS technologies, engaging directly with customers and industry leaders.

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SOURCE DB HiTek

... Germany's Largest Power Semiconductor Exhibition in Nuremberg (May 6–8)

… Sharing the latest developments in Analog & Power, Specialty CIS, SiC and GaN technologies 

SEOUL, South Korea, April 7, 2025 /PRNewswire/ -- DB HiTek, a leading 8-inch foundry company, will participate in PCIM 2025, Europe's largest power semiconductor exhibition, held in Nuremberg, Germany, from May 6 to May 8 (local time), to expand its presence in the European market.

At the exhibition, DB HiTek plans to showcase the latest technology developments in its world-best BCDMOS, Specialty CIS, and the next-generation power semiconductor SiC and GaN. Notably, the company's SiC and GaN power semiconductor processes, which DB HiTek has been actively developing as key future growth drivers, will be prominently featured at the event.

In February, DB HiTek secured the basic characteristics of its 8-inch SiC wafer through full in-house processing. The company aims to improve yield and reliability throughout this year and plans to offer the process to its customers by late 2025.

Additionally, DB HiTek has successfully developed an 8-inch GaN process with 650V HEMT characteristics and plans to complete reliability validation within the year. The company announced that it will launch a dedicated GaN MPW service in October, actively supporting customer product evaluations.

According to market research firm Yole Développement, the global SiC and GaN power semiconductor market is expected to grow from $3.6 billion in 2024 to $7.6 billion in 2027, with a high CAGR of 27.6%.

Regarding its participation in PCIM 2025, DB HiTek commented, "This exhibition will provide an opportunity to demonstrate our recognized strengths in supporting fabless customers and collaborating with global clients in the European market."

DB HiTek has established itself as a global leader in 8-inch Analog and Power semiconductor processes. However, the European customer base remains relatively small compared to other regions. The company aims to use this event to expand its footprint in the growing European market by acquiring new customers and strengthening collaborations with existing clients.

Currently, DB HiTek is mass-producing chips for 400 companies, with cumulative shipments of 6 million 8-inch wafers for Analog and Power semiconductor. The company has also secured Specialty CIS process technologies, including X-ray sensors, Global Shutter, and SPAD, and is actively engaged in mass production with various partners. Its semiconductor applications span mobile, consumer, and industrial sectors, with a growing share of automotive chips in recent years.

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SOURCE DB HiTek