SK hynix Inc.

-  First HBF standard showcased within six months of consortium launch, expanding the ecosystem with participation from Google, Tenstorrent

-  Keynote by SK hynix Executive Vice President Kim Chun-sung and Vice President Kang Uk-song on opening day, offering solutions for next-generation AI infrastructure based on 'Tiered Memory'

-  Panel discussion with Google DeepMind•Sandisk on 'Breaking the Memory Wall with HBF'

-  Tenth-generation (V10) 375-layer 4D NAND unveiled for the first time at exhibition booth, offering a 2.5 times increase in power efficiency

-  "Expanding the boundaries of memory and storage through HBF technology… contributing to new architectures that boost system efficiency"

SEOUL, South Korea, Aug. 3, 2026 /PRNewswire/ -- SK hynix Inc. (or "the company", www.skhynix.com) announced today (GMT+9) in collaboration with Sandisk that it has unveiled the first standard specifications for High Bandwidth Flash (HBF), a next-generation storage technology.

The announcement coincides with the opening of 'FMS (Future of Memory and Storage) 2026,' held at the Santa Clara Convention Center in California from August 4 to 6 (local time). The company is set to present HBF as a key technology to overcome memory bottlenecks in the AI era through keynote speeches and panel discussions during the event.

HBF technology is a new memory layer between HBM and SSDs. It enables high-speed data transfer similar to HBM while significantly expanding capacity by leveraging NAND technology. With the expansion of AI inference driving a surge in data volumes to process, HBF is gaining attention as a technology that simultaneously resolves bandwidth and capacity scalability challenges.

This milestone comes about six months after launching the consortium in February this year, following the initial standardization partnership with Sandisk in August 2025. Capacity specifications cover up to 512GB based on two stack configurations (8-high and 16-high NAND dies). Bandwidth is categorized into three grades (Grade1~3), delivering scalable performance from approximately 0.4TB/s to 3.0TB/s.

A key highlight is the interconnect linking HBF technology and processors. HBF technology adopts UCIe¹, an industry standard connection interface, laying the groundwork to flexibly integrate HBF technology across different processor types, including GPUs and CPUs.

The standard also outlines connection interfaces and electrical characteristics, reliability and packaging guidelines for HBF die stack process, software I/O guidelines.

The specification was disclosed through the Open Compute Project (OCP), world's largest open data center technology initiative, positioning it as an open standard for the entire industry rather than a proprietary technology.

SK hynix plans to leverage this release to expand the adoption of HBF technology in the AI storage market and foster the surrounding ecosystem. With Google and Tenstorrent currently participating in the HBF consortium, the consortium aims to expand its reach while enhancing technical maturity and market acceptance based on open collaboration.

On the opening day of FMS 2026 (August 4, local time), SK hynix Executive Vice President Kim Chun-sung (Head of Solution Development) and Vice President Kang Uk-song (Head of Next Generation Product Planning) will deliver a joint keynote address, titled 'Orchestrating Efficient AI Infrastructure through Tiered Memory in the Era of Agentic AI.'

As Agentic AI² rapidly commercializes, the volume of data to process is surging alongside growing demands for higher speed and efficiency. Recognizing that a single memory type cannot address these complex challenges, both speakers will present the necessity and future direction of a next-generation architecture based on 'Tiered Memory', a framework that connects and optimizes diverse memory types into a unified system.

On August 6, SK hynix Vice President Lim Eui-cheol (Head of Solution AT), Sandisk Vice President Rajeev Nagabhirava and Google DeepMind Senior Staff Engineer Xiaoyu Ma will join a panel discussion titled 'Breaking the Memory Wall with High Bandwidth Flash.' Bringing together key leaders across memory, storage and AI, the session will examine fundamental shifts in memory architecture across AI infrastructure and highlight the potential and role of HBF as a transformative solution.

Furthermore, SK hynix will host an exhibition booth throughout FMS 2026, featuring a Partnership Zone, a Next-Generation Tech Zone and Tech Sessions.

Notably, the company will publicly reveal for the first time its tenth-generation (V10) 375-layer 4D NAND wafer and products, which are currently under development. The 375-layer 4D NAND improves performance per watt by 2.5 times compared to the previous generation, making it optimized for AI infrastructure environments like data centers that demand high power efficiency and performance. The company plans to initiate mass production of high-performance, high capacity eSSDs based on the 375-layer 4D NAND early next year to reinforce its leadership in the AI NAND market.

SK hynix will also display a versatile product lineup spanning mobile, PC, automotive and robotics, showcasing the company's competitive edge in memory technology and its collaborative achievements with customers in the AI era.

"With the rapid spread of AI applications, we are at a point where overall data processing structures must be redesigned," said SK hynix Executive Vice President and Head of Solution Development Kim Chun-sung, adding, "Through HBF, SK hynix will expand the boundaries between memory and storage and contribute to building new architectures that enhance overall system efficiency."

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world's top-tier semiconductor supplier offering Dynamic Random Access Memory chips ("DRAM") and flash memory chips ("NAND flash") for a wide range of distinguished customers globally. The Company's common shares are traded on the Korea Exchange, its American Depositary Shares are traded on NASDAQ, and its Global Depository Shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at www.skhynix.com, news.skhynix.com.

Forward-Looking Statements

This press release may contain forward-looking statements, which involve risks and uncertainties. These statements are generally identified words such as "may," "will," "intend," "should," "believe," "expect," "anticipate," "project," "estimate" and similar expressions, or the negative of such expressions. Forward-looking statements are not guarantees of future performance and are subject to inherent risks, uncertainties, and other factors that could cause actual results to differ materially from those expressed or implied. Readers are cautioned not to place undue reliance on any of these forward-looking statements. These forward-looking statements speak only as of the date hereof. SK hynix undertakes no obligation to update any of these forward-looking statements to reflect events or circumstances after the date of this news release or to reflect actual outcomes, unless required by law.

This press release is for informational purposes only and does not constitute an offer to sell or a solicitation of an offer to buy any securities in any jurisdiction. No part of this press release should form the basis of, or be relied upon in connection with, any contract, commitment, or investment decision.

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SOURCE SK hynix Inc.

• Reports revenues of 79.3187 trillion won, operating profit of 60.5426 trillion won, net profit of 93.9226 trillion won
• Record-Breaking Quarterly Performance Driven by High-Value Product Sales Amid Strong AI Demand; Cumulative First-Half Revenue Surpasses 100 Trillion won for the First Time
• Long-Term Agreements with around 10 Key Customers; Multi-Year Contracts and Technological Innovation Address Structural Demand Growth
• HBM4 achieves customer-required operating speeds, industry-leading power efficiency, and cost competitiveness, demonstrating differentiated technological edge
• Company to reinforce Production Capacity and Financial Health simultaneously by Preparing for Mid-to-Long-Term Growth Opportunities while Adhering to CapEx Discipline

SEOUL, South Korea, July 28, 2026 /PRNewswire/ -- SK hynix Inc. (or "the company", www.skhynix.com) announced today that it has recorded 79.3187 trillion won in revenues, 60.5426 trillion won in operating profit (with an operating margin of 76%), and 93.9226 trillion won in net profit (with a net margin of 118%), marking an all-time high quarterly performance.

Driven by sustained demand growth from expanding AI infrastructure investments, high-performance products for AI servers led price increases, enabling the company to surpass its previous record set in the prior quarter. Consequently, cumulative revenue for the first half of the year crossed the 100 trillion won mark for the first time in company history. Revenue and operating profit increased by 257% and 557% year-over-year, respectively.

Both DRAM and NAND flash memory prices experienced significant quarter-over-quarter increases. SK hynix achieved top-tier profitability by expanding sales centered on high-value-added products, including HBM, DRAM for AI servers, and eSSD.

On the back of these strong operational results, cash and cash equivalents reached 88 trillion won at the end of the second quarter, an increase of 33.6 trillion won from the previous quarter. Total debt decreased by 0.7 trillion won to 18.6 trillion won, expanding the net cash position to 69.4 trillion won. The company evaluated that its financial flexibility has significantly strengthened, supported by record-high profit levels and cash generation capability.

As AI evolves into agentic forms that perform complex tasks on behalf of users and expands across various services, the underlying demand base for memory is broadening. Consequently, a structural shift is occurring where demand for both AI memory and conventional memory is expanding in tandem.

With major tech companies increasing their AI infrastructure investments, additional supply requests continue to mount. As these investments are supported by revenue generated from AI services, the momentum in memory demand is expected to persist.

Based on this demand outlook, SK hynix is expanding multi-year contract discussions with customers to secure mid-to-long-term supply stability. The company has finalized Long-Term Agreements (LTAs) with around 10 customers, including key strategic partners, and is continuing further discussions with major industry clients. Through these efforts, SK hynix aims to enhance operational efficiency while strengthening its mid-to-long-term business stability and sustainable growth foundation.

As AI models advance, the scope of memory competitiveness is expanding into system architecture and packaging. SK hynix plans to lead memory innovation from a system perspective, leveraging its comprehensive product portfolio and co-development capabilities with customers.

HBM4 has demonstrated its differentiated technological edge by achieving customer-required operating speeds while delivering industry-leading power efficiency and cost competitiveness. The company began mass shipments of HBM4 in the second quarter and will ramp up production in the second half of the year. For HBM4E, which completed sample shipments in the first half, the company applied optimal processes featuring technology maturity and mass-production stability. 

SK hynix plans to continue its leadership in the HBM sector based on its comprehensive strength, including superior quality, stable supply capabilities based on high yield, cost competitiveness, and industry-leading performance. 

Sales of SOCAMM2 grew significantly in the second quarter, and shipments of products based on 10nm-class 6th generation (1c) process technology began in earnest.

In NAND, SK hynix is accelerating its transition to advanced process nodes to strengthen its portfolio around high-capacity and high-performance products. 321-layer products already represent the largest share of total production, and the company plans to expand this to approximately 50% of domestic production capacity by the end of the year.

In a market environment where customer demand exceeds supply capabilities, the ability to deliver requested volumes in a timely manner has emerged as a core business competitiveness. 

In response, SK hynix is accelerating the mass production schedule for M15X while making investments to rapidly expand production capacity following the opening of the Yongin Phase 1 cleanroom in early 2027. Mid-to-long-term investment plans—including the recently announced P&T7 advanced packaging facility, M17 NAND production base, and the development of a new semiconductor cluster—will be executed in phases based on customer demand and investment efficiency.

SK hynix emphasized that it will reinforce both its production capacity and financial health by seamlessly preparing for mid-to-long-term growth opportunities while maintaining capital expenditure discipline (CapEx Discipline).

Disclaimer

This material has been prepared by the Company for informational purposes only, and the information contained herein has not undergone any separate, independent verification process. No representations or warranties are made regarding the fairness, accuracy, or completeness of the information contained in this material, and such information should not be relied upon. Neither the Company nor its employees bear any civil, criminal, or administrative liability for any damages arising from this material or from its use.

Review of the FY2026 Q2 financial results has not been finalized. Figures in this earnings release are subject to changes during the independent auditing process.

All financial information contained in this document is based on consolidated K-IFRS.

This material contains forward-looking statements, which involve risks and uncertainties. These statements are generally identified words such as "may," "will," "intend," "should," "believe," "expect," "anticipate," "project," "estimate" and similar expressions, or the negative of such expressions. Forward-looking statements are not guarantees of future performance and are subject to inherent risks, uncertainties, and other factors that could cause actual results to differ materially from those expressed or implied. Readers are cautioned not to place undue reliance on any of these forward-looking statements. These forward-looking statements speak only as of the date hereof. SK hynix undertakes no obligation to update any of these forward-looking statements to reflect events or circumstances after the date of this news release or to reflect actual outcomes, unless required by law.

This material does not constitute a solicitation for the acquisition or purchase of securities, and no part of this material should serve as the basis for any contract, agreement, or investment decision, nor should it be relied upon in connection therewith.

About SK hynix Inc.

SK hynix Inc., headquartered in Korea, is the world's top tier semiconductor supplier offering Dynamic Random Access Memory chips ("DRAM") and flash memory chips ("NAND flash") for a wide range of distinguished customers globally. The Company's shares are traded on the Korea Exchange, and the Global Depository shares are listed on the Luxembourg Stock Exchange. Further information about SK hynix is available at www.skhynix.com, news.skhynix.com .

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SOURCE SK hynix Inc.